Introduction

The TS512MLK72V3N is a 512M x 72bits DDR3-1333 ECC Unbuffered-DIMM. The TS512MLK72V3N consists of 18pcs 256Mx8bits DDR3 SDRAMs in FBGA packages and a 2048 bits serial EEPROM on a 240-pin printed circuit board. The TS512MLK72V3N is a Dual In-Line Memory Module and is intended for mounting into 240-pin edge connector sockets. Synchronous design allows precise cycle control with the use of system clock. Data I/O transactions are possible on both edges of DQS. Range of operation frequencies, programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.

Features

CAS latency

9

Internal memory

4 GB

Memory layout (modules x size)

1 x 4 GB

Internal memory type

DDR3

Memory clock speed

1333 MHz

Memory form factor

240-pin DIMM

ECC

Y

Memory voltage

1.5 V